| PART |
Description |
Maker |
| M39P0R8070E2 M39P0R8070E2ZADE M39P0R8070E2ZADF |
256 or 512Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit Low Power SDRAM, 1.8V supply, Multi-Chip Package
|
Numonyx B.V
|
| C1220X7R0J105M085AC |
Commercial Grade ( Low ESL Reverse Geometry )
|
TDK Electronics
|
| C1220X5R1A474M085AC |
Commercial Grade ( Low ESL Reverse Geometry )
|
TDK Electronics
|
| C1220X7R1E104M085AC |
Commercial Grade ( Low ESL Reverse Geometry )
|
TDK Electronics
|
| C1220X5R1H223M085AC |
Commercial Grade ( Low ESL Reverse Geometry )
|
TDK Electronics
|
| C1220X5R1H473M085AC |
Commercial Grade ( Low ESL Reverse Geometry )
|
TDK Electronics
|
| C1220X5R1E104M085AC |
Commercial Grade ( Low ESL Reverse Geometry )
|
TDK Electronics
|
| TH50VPN564 TH50VPN5640EBSB |
MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS PSEUDO SRAM AND NAND E2PROM MEMORY MIXED MULTI-CHIP PACKAGE
|
TOSHIBA
|
| M36L0R7050L1ZAMF M36L0R7060U1 M36L0R7060U1ZAME M36 |
128 Mbit (Mux I/O, Multiple Bank, Multi-Level, Burst) Flash memory, 32 or 64 Mbit PSRAM, 1.8V supply Multi-Chip Package
|
STMicroelectronics
|
| DBCDINM48RABC1S2 DBCDINM48RABC1S3 DBCDINM48RABCS2 |
DIN 41612 TYPE R (REVERSED) - MALE
|
Dubilier
|
| CE201210-2N2D CE201210-1N8D CE201210-1N5D CE201210 |
Multi-Layer Chip Inductors
MAGNETICS MULTILAYER CHIP INDUCTOR
|
Bourns Electronic Solutions
Bourns, Inc.
|
| CTCB0603F-170U CTCB0805F-190U CTCB1206F-190U CTCB0 |
Chip Beads - Multi-layer
1 FUNCTIONS, 4.5 A, FERRITE CHIP
|
Central Technologies
|
